28 31 35 42 56 70 105 140 v 40 45 50 60 80 100 150 200 v 0.85 0.92 = 5a v 1 of 2 c/w pf 0.55 v 580g characteristic symbol 5.0 a schottky barrier diode m aximum r atings and electrical characteristics @t a =25 c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. p eak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rw m v r rm s reverse voltage v r( rm s) a v erage rectified output current @t l = 75 c (note 1) i o 5. 0 a non-repet itive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fs m a forward v oltage @i f fm p e ak reverse current @t a = 25 c at rated dc blocking voltage @t a = 100 c i rm 0. 1 20 ma t ypical junction capacitance (note 2) c j t ypical thermal resistance (note 1) r ja operat ing and storage temperature range t j , t st g c not e: 1. valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. 540g 550g 560g 5100g units 0.70 350 280 200 15 z ibo seno electronic engineering co., ltd. www.senocn.com 5200g 100 545g -55 t o +150 -55 t o +125 mbr540g-mbr5200g mbr540g-mbr5200g to-263/d pak e: to-263/d pak, molded plastic m ounting position: any polarity: see diagram erminals: plated leads solderable per cas classification rating 94v-o plastic case material has ul flammability guard ring die construction for use in low voltage application low power loss, high efficiency ideally suited for automatic assembly m e chanical data ! ! t mil- st d-202, method 208 ! ! ! lead free: for rohs / lead free version ! schottk y barrier chip ! ! ! ! ! 2 2 mbr mbr mbr mbr mbr mbr mbr mbr 5150g a l l d a t a s h e e t
2 of 2 z ibo seno electronic engineering co., ltd. www.senocn.com r ati ng and characteristic curves fig.1-typical for ward current derating curve a verage for ward current,(a) 1.0 2.0 3.0 4.0 5.0 6.0 case tempera ture,( c) 0 0 20 40 60 80 100 120 140 160 180 200 40v-45v fig.2-typical for ward characteristics 0.1 1.0 .01 10 50 instantaneous for ward current,(a) for w ard voltage,(v) pulse width 300us 1% duty cycle .1 .3 .5 .7 .9 1.1 1.3 1.5 3.0 50~60v 80~100v 20~45v tj=25 c 150~200v fig.3-maximum non-repetitive for w ard surge current 60 30 0 90 150 120 number of cycles a t 60hz 11 0 5 50 100 tj=25 c 8.3ms single half sine w ave jedec method peak forward surge current ,(a) fig.4 - typical reverse characteristics reverse leakage current , (ma) 0.001 0.01 0.1 1.0 100 10 0 percent of ra ted peak reverse voltage,(%) 20 40 60 80 100 20v~45v 50v~200v t2 5 c j = t 100 c j = 50-200v mbr540g-mbr5200g mbr540g-mbr5200g a l l d a t a s h e e t
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